Semiconductor device and display device including the same

ABSTRACT

A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.

BACKGROUND OF THE INVENTION 1. Field of the Invention

One embodiment of the disclosed invention relates to a semiconductordevice and a display device including the semiconductor device.

2. Description of the Related Art

Attention has been focused on a technique for forming a transistor (alsoreferred to as thin film transistor (TFT)) using a semiconductor thinfilm formed over a substrate having an insulating surface. Thetransistor is applied to a wide range of electronic devices such as anintegrated circuit (IC) and an image display device (display device).

A technique for forming a pixel portion and a driver circuit portionusing transistors over the same substrate in a display device has beenactively developed.

A silicon-based semiconductor material is widely known as a material fora semiconductor thin film applicable to a transistor. As anothermaterial for a semiconductor thin film, an oxide semiconductor materialhas been attracting attention.

For example, a transistor whose active layer includes an amorphous oxidecontaining indium (In), gallium (Ga), and zinc (Zn) and having anelectron carrier concentration lower than 10¹⁸/cm³ is disclosed (seePatent Document 1).

REFERENCE Patent Document [Patent Document 1] Japanese Published PatentApplication No. 2006-165528 SUMMARY OF THE INVENTION

A transistor is thus suitably used for a display device; the number oftransistors performing switching of pixels is increased when the numberof pixels is increased with an increase in the resolution of a displaydevice. When the number of the transistors is increased, the area of aregion where the transistors are disposed is increased and thus theaperture ratio is reduced; accordingly, it is difficult to achievehigher resolution of the display device.

With an increase in the resolution of the display device, thetransistors performing switching of the pixels are required to operateat high speed.

In view of such problems, an object is to provide a semiconductor devicein which the area of a region where transistors are disposed is reduced.Another object is to provide a semiconductor device includingtransistors capable of high-speed operation.

Another object is to achieve higher resolution of a display deviceincluding the semiconductor device by reducing the area of the regionwhere the transistors are disposed and improving the aperture ratio.

In a semiconductor device including transistors, high-speed operation isachieved and the area of a region where the transistors are disposed isreduced. Specifically, a first transistor and a second transistor arestacked; the first transistor and the second transistor have a gateelectrode in common; and at least one of semiconductor films used in thefirst transistor and the second transistor is an oxide semiconductorfilm. With the use of the oxide semiconductor film as the semiconductorfilm in the transistor, high field-effect mobility and high-speedoperation can be achieved. Since the first transistor and the secondtransistor are stacked and have the gate electrode in common, the areaof a region where the transistors are disposed can be reduced. Thedetails will be given below.

One embodiment of the disclosed present invention is a semiconductordevice including a first transistor and a second transistor. The firsttransistor includes a first semiconductor film; a first source electrodeand a first drain electrode over the first semiconductor film; a firstgate insulating film over the first semiconductor film; and a gateelectrode which is in contact with the first gate insulating film andoverlaps with the first semiconductor film. The second transistorincludes a second gate insulating film over the gate electrode; a secondsemiconductor film which is in contact with the second gate insulatingfilm and overlaps with the gate electrode; and a second source electrodeand a second drain electrode over the second semiconductor film. Thefirst transistor and the second transistor are stacked. At least one ofthe first semiconductor film and the second semiconductor film is anoxide semiconductor film.

Another embodiment of the disclosed present invention is a semiconductordevice including a first transistor and a second transistor. The firsttransistor includes a first semiconductor film; a first source electrodeand a first drain electrode over the first semiconductor film; a firstgate insulating film over the first semiconductor film; and a gateelectrode which is in contact with the first gate insulating film andoverlaps with the first semiconductor film. The second transistorincludes a second gate insulating film over the gate electrode; a secondsemiconductor film which is in contact with the second gate insulatingfilm and overlaps with the gate electrode; an insulating film over thesecond semiconductor film; and a second source electrode and a seconddrain electrode which are over the insulating film and are electricallyconnected to the second semiconductor film. The first transistor and thesecond transistor are stacked. At least one of the first semiconductorfilm and the second semiconductor film is an oxide semiconductor film.

Another embodiment of the disclosed present invention is a semiconductordevice including a first transistor and a second transistor. The firsttransistor includes a first source electrode and a first drainelectrode; a first semiconductor film over the first source electrodeand the first drain electrode; a first gate insulating film over thefirst semiconductor film; and a gate electrode which is in contact withthe first gate insulating film and overlaps with the first semiconductorfilm. The second transistor includes a second gate insulating film overthe gate electrode; a second source electrode and a second drainelectrode over the second gate insulating film; and a secondsemiconductor film which is in contact with the second gate insulatingfilm, overlaps with the gate electrode, and is electrically connected tothe second source electrode and the second drain electrode. The firsttransistor and the second transistor are stacked. At least one of thefirst semiconductor film and the second semiconductor film is an oxidesemiconductor film.

In each of the above structures, an interlayer insulating film ispreferably provided between the first transistor and the secondtransistor. Further, a protective insulating film is preferably providedover the second semiconductor film.

By providing the interlayer insulating film between the first transistorand the second transistor, coverage with the second gate insulating filmused in the second transistor can be improved. Further, by providing theprotective insulating film over the second semiconductor film,impurities attaching to the second semiconductor film at the time offormation of the second source electrode and the second drain electrodecan be reduced and thus the reliability of the second transistor can beimproved.

In each of the above structures, the oxide semiconductor film preferablycontains at least one of oxides of indium, zinc, gallium, zirconium,tin, gadolinium, titanium, and cerium. Further, it is preferable thatthe oxide semiconductor film include crystal parts, and c-axes of thecrystal parts be aligned in a direction parallel to a normal vector of asurface where the oxide semiconductor film is formed.

With the use of such an oxide semiconductor film, a semiconductor devicewhich has high field-effect mobility and is capable of high-speedoperation can be achieved.

The energy gap of the oxide semiconductor film disclosed in thisspecification and the like is 2.8 eV to 3.2 eV, which is greater thanthat of silicon (1.1 eV). The minor carrier density of the oxidesemiconductor film is 1×10⁻⁹/cm³, which is much smaller than theintrinsic carrier density of silicon (1×10¹¹/cm³).

Majority carriers (electrons) of the oxide semiconductor film flow onlyfrom a source of a transistor. Further, a channel formation region canbe depleted completely. Thus, off-state current of the transistor can beextremely small. The off-state current of the transistor including theoxide semiconductor film is as small as 10 yA/μm or less at roomtemperature, and 1 yA/μm or less at 85° C. to 95° C.

Accordingly, a transistor including an oxide semiconductor film has asmall S value, so that an ideal S value can be obtained. Further, such atransistor has high reliability.

In each of the above structures, the first transistor and the secondtransistor each can serve as a pixel switching element.

Another embodiment of the present invention is a display deviceincluding a semiconductor device having the above structure.

In particular, by using a semiconductor device having the abovestructure as pixel switching elements in a pixel portion, the apertureratio can be improved and thus higher resolution can be achieved.

A semiconductor device in which the area of a region where transistorsare disposed is reduced can be provided. Further, a semiconductor deviceincluding transistors capable of high-speed operation can be provided.Furthermore, in a display device including the semiconductor device, thearea of the region where the transistors are disposed can be reduced,the aperture ratio can be improved, and higher resolution can beachieved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a top view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 2A to 2D are cross-sectional views illustrating an example of amanufacturing process of a semiconductor device.

FIGS. 3A to 3D are cross-sectional views illustrating an example of amanufacturing process of a semiconductor device.

FIGS. 4A and 4B are a top view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 5A to 5D are cross-sectional views illustrating an example of amanufacturing process of a semiconductor device.

FIGS. 6A to 6D are cross-sectional views illustrating an example of amanufacturing process of a semiconductor device.

FIGS. 7A and 7B are a top view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 8A and 8B are a top view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 9A to 9C are a top view and structural views of pixelsillustrating embodiments of a display device.

FIGS. 10A and 10B are cross-sectional views each illustrating oneembodiment of a display device.

FIGS. 11A to 11F illustrate electronic devices.

FIGS. 12A-1 to 12A-3 and 12B illustrate electronic devices.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the invention disclosed in thisspecification will be described with reference to the accompanyingdrawings. Note that the present invention is not limited to thefollowing description and it will be readily appreciated by thoseskilled in the art that modes and details can be modified in variousways without departing from the spirit and the scope of the presentinvention. Therefore, the present invention should not be construed asbeing limited to the description in the following embodiments.

Note that the position, size, range, or the like of each structureillustrated in drawings and the like is not accurately represented insome cases for easy understanding. Therefore, the disclosed invention isnot necessarily limited to the position, size, range, or the likedisclosed in the drawings and the like.

In this specification and the like, ordinal numbers such as “first”,“second”, and “third” are used in order to avoid confusion amongcomponents, and the terms do not limit the components numerically.

Note that in this specification and the like, the term “over” or “below”does not necessarily mean that a component is placed “directly on” or“directly under” another component. For example, the expression “a gateelectrode over a gate insulating film” can mean the case where there isan additional component between the gate insulating film and the gateelectrode.

In addition, in this specification and the like, the term “electrode” or“wiring” does not limit a function of a component. For example, an“electrode” is sometimes used as part of a “wiring”, and vice versa.Further, the term “electrode” or “wiring” can include the case where aplurality of “electrodes” or “wirings” is formed in an integratedmanner.

Functions of a “source” and a “drain” are sometimes replaced with eachother when a transistor of opposite polarity is used or when thedirection of current flowing is changed in circuit operation, forexample. Therefore, the terms “source” and “drain” can be replaced witheach other in this specification and the like.

Note that in this specification and the like, the term “electricallyconnected” includes the case where components are connected through anobject having any electric function. There is no particular limitationon an object having any electric function as long as electric signalscan be transmitted and received between components that are connectedthrough the object. Examples of an object having any electric functionare a switching element such as a transistor, a resistor, an inductor, acapacitor, and an element with a variety of functions as well as anelectrode and a wiring.

Embodiment 1

In this embodiment, one embodiment of a semiconductor device and amethod of manufacturing the semiconductor device will be described withreference to FIGS. 1A and 1B, FIGS. 2A to 2D, and FIGS. 3A to 3D.

<Structural Example of Semiconductor Device>

FIGS. 1A and 1B are a top view and a cross-sectional view, respectively,of a transistor as one embodiment of a semiconductor device. Note thatFIG. 1A is a top view, and FIG. 1B is a cross-sectional view taken alongline X1-Y1 in FIG. 1A. Note that in FIG. 1A, some components of thetransistor (e.g., a first gate insulating film 110) are not illustratedfor simplicity.

The semiconductor device illustrated in FIGS. 1A and 1B includes a firsttransistor 150 and a second transistor 152. The first transistor 150includes a base insulating film 104 formed over a substrate 102; a firstsemiconductor film 106 formed over the base insulating film 104; a firstsource electrode 108 a and a first drain electrode 108 b formed over thefirst semiconductor film 106; the first gate insulating film 110 formedover the first semiconductor film 106; and a gate electrode 112 which isin contact with the first gate insulating film 110 and overlaps with thefirst semiconductor film 106. The second transistor 152 includes asecond gate insulating film 116 formed over the gate electrode 112; asecond semiconductor film 118 which is in contact with the second gateinsulating film 116 and overlaps with the gate electrode 112; and asecond source electrode 120 a and a second drain electrode 120 b whichare formed over the second semiconductor film 118. The first transistor150 and the second transistor 152 are stacked.

The semiconductor device illustrated in FIGS. 1A and 1B may include aninterlayer insulating film 114 between the first transistor 150 and thesecond transistor 152, and may include an insulating film 122 and aplanarization insulating film 124 over the second transistor 152.

Note that at least one of the first semiconductor film 106 and thesecond semiconductor film 118 is an oxide semiconductor film. With theuse of an oxide semiconductor film for the first semiconductor film 106or the second semiconductor film 118, the semiconductor device can havehigh field-effect mobility and operate at high speed.

In this embodiment, a structure in which an oxide semiconductor film isused for each of the first semiconductor film 106 and the secondsemiconductor film 118 will be described. In the case where the firstsemiconductor film 106 and the second semiconductor film 118 arepreferably equivalent in electrical characteristics, it is effective touse an oxide semiconductor film for each of the first semiconductor film106 and the second semiconductor film 118 in this manner.

The first transistor 150 and the second transistor 152 have the gateelectrode 112 in common. That is, the first transistor 150 is a top-gatetransistor in which the gate electrode 112 is provided over the firstsemiconductor film 106 with the first gate insulating film 110therebetween, and the second transistor 152 is a bottom-gate transistorin which the second semiconductor film 118 is provided over the gateelectrode 112 with the second gate insulating film 116 therebetween. Byemploying a structure in which the first transistor 150 and the secondtransistor 152 are stacked and have the gate electrode 112 in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor 150 and the second transistor 152 have thegate electrode 112 in common, the number of manufacturing steps,materials, or the like of the transistors can be reduced.

Note that the details of the other components will be described later indescription of a method of manufacturing the semiconductor device withreference to FIGS. 2A to 2D and FIGS. 3A to 3D.

<Method 1 of Manufacturing Semiconductor Device>

Hereinafter, one example of a method of manufacturing the semiconductordevice illustrated in FIGS. 1A and 1B of this embodiment will bedescribed with reference to FIGS. 2A to 2D and FIGS. 3A to 3D.

First, the substrate 102 is prepared. There is no particular limitationon a substrate that can be used as the substrate 102 as long as it hasheat resistance high enough to withstand heat treatment performed later.For example, a glass substrate of barium borosilicate glass,aluminoborosilicate glass, or the like, a ceramic substrate, a quartzsubstrate, or a sapphire substrate can be used. Alternatively, a singlecrystal semiconductor substrate or a polycrystalline semiconductorsubstrate of silicon, silicon carbide, or the like; a compoundsemiconductor substrate of silicon germanium or the like; an SOIsubstrate; or the like can be used.

A flexible substrate may be used as the substrate 102. In the case wherea flexible substrate is used, the first transistor 150 including thefirst semiconductor film 106 and the second transistor 152 including thesecond semiconductor film 118 may be directly formed over the flexiblesubstrate; alternatively, the first transistor 150 including the firstsemiconductor film 106 and the second transistor 152 including thesecond semiconductor film 118 may be formed over a manufacturingsubstrate and then may be separated from the manufacturing substrate andtransferred to a flexible substrate. Note that in order to separate thetransistors from the manufacturing substrate and transfer them to theflexible substrate, a separation layer is preferably provided betweenthe manufacturing substrate and the first transistor 150 including thefirst semiconductor film 106.

Next, the base insulating film 104 is formed over the substrate 102 (seeFIG. 2A). The base insulating film 104 has an effect of preventingdiffusion of impurity elements such as hydrogen, moisture, and an alkalimetal from the substrate 102, and can be formed to have a single-layerstructure or a layered structure using one or more films of siliconoxide, silicon nitride, silicon oxynitride, silicon nitride oxide,aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum nitrideoxide, hafnium oxide, gallium oxide, and a mixed material of any ofthese.

Further, the base insulating film 104 has an effect of supplying oxygento the first semiconductor film 106 to be formed later. For example, inthe case where an insulating film containing excess oxygen is used asthe base insulating film 104 and an oxide semiconductor film is used asthe first semiconductor film 106, part of oxygen can be released byheating the base insulating film 104 to be supplied to the oxidesemiconductor film; thus, oxygen vacancies in the oxide semiconductorfilm can be repaired. In particular, it is preferable that the oxygencontent of the base insulating film 104 be in excess of at least that inthe stoichiometric composition. For example, a film of silicon oxiderepresented by the formula SiO_(2+α) (α>0) is preferably used as thebase insulating film 104. When such a silicon oxide film is used as thebase insulating film 104, oxygen can be supplied to the oxidesemiconductor film, so that the first transistor 150 including the oxidesemiconductor film can have favorable transistor characteristics.

Note that the base insulating film 104 is not necessarily provided. Forexample, the first semiconductor film 106 may be directly formed overthe substrate 102 when a substrate from which impurities such as water,moisture, and an alkali metal are not diffused is used as the substrate102. However, as described in this embodiment, the base insulating film104 is preferably provided.

Before the base insulating film 104 is formed, plasma treatment or thelike may be performed on the substrate 102. As the plasma treatment,reverse sputtering in which an argon gas is introduced and plasma isgenerated can be performed. The reverse sputtering is a method in whichvoltage is applied to the substrate 102 side with the use of an RF powersource in an argon atmosphere and plasma is generated in the vicinity ofthe substrate 102 so that a substrate surface is modified. Note thatinstead of an argon atmosphere, a nitrogen atmosphere, a heliumatmosphere, an oxygen atmosphere, or the like may be used. The reversesputtering can remove particle substances (also referred to as particlesor dust) attached to the surface of the substrate 102.

Next, an oxide semiconductor film is formed over the base insulatingfilm 104 and a photolithography step and an etching step are performed.Thus, the first semiconductor film 106 is formed (see FIG. 2A).

Note that the base insulating film 104 and the first semiconductor film106 are preferably formed successively without exposure to the air. Bysuch successive formation without exposure to the air, impurities can beprevented from attaching to or entering the interface between the baseinsulating film 104 and the first semiconductor film 106.

An oxide semiconductor film can be used as the first semiconductor film106. The oxide semiconductor film is in a single crystal state, apolycrystalline (also referred to as polycrystal) state, amicrocrystalline state, an amorphous state, or the like.

An oxide semiconductor used for the first semiconductor film 106preferably contains at least indium (In) or zinc (Zn). In particular, Inand Zn are preferably contained. As a stabilizer for reducing variationin electrical characteristics of a transistor using the oxidesemiconductor, gallium (Ga) is preferably additionally contained. Tin(Sn) is preferably contained as a stabilizer. In addition, as astabilizer, one or more selected from hafnium (Hf), zirconium (Zr),titanium (Ti), scandium (Sc), yttrium (Y), and an lanthanoid element(such as cerium (Ce), neodymium (Nd), or gadolinium (Gd), for example)is preferably contained.

As the oxide semiconductor, for example, any of the following can beused: indium oxide, tin oxide, zinc oxide, an In—Zn-based oxide, aSn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, aSn—Mg-based oxide, an In—Mg-based oxide, an In—Ga-based oxide, anIn—Ga—Zn-based oxide (also referred to as IGZO), an In—Al—Zn-basedoxide, an In—Sn—Zn-based oxide, a Sn—Ga—Zn-based oxide, anAl—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide,an In—Zr—Zn-based oxide, an In—Ti—Zn-based oxide, an In—Sc—Zn-basedoxide, an In—Y—Zn-based oxide, an In—La—Zn-based oxide, anIn—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide,an In—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-basedoxide, an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide, anIn—Ho—Zn-based oxide, an In—Er—Zn-based oxide, an In—Tm—Zn-based oxide,an In—Yb—Zn-based oxide, an In—Lu—Zn-based oxide, an In—Sn—Ga—Zn-basedoxide, an In—Hf—Ga—Zn-based oxide, an In—Al—Ga—Zn-based oxide, anIn—Sn—Al—Zn-based oxide, an In—Sn—Hf—Zn-based oxide, and anIn—Hf—Al—Zn-based oxide.

Here, an In—Ga—Zn-based oxide refers to an oxide mainly containing In,Ga, and Zn and there is no particular limitation on the ratio ofIn:Ga:Zn. The In—Ga—Zn-based oxide may contain a metal element otherthan In, Ga, and Zn.

Alternatively, a material represented by InMO₃(ZnO)_(m) (m>0, m is notan integer) may be used as an oxide semiconductor. Note that Mrepresents one or more metal elements selected from Ga, Fe, Mn, and Co,or the above-described element as a stabilizer. Alternatively, as theoxide semiconductor, a material represented by In₂SnO₅(ZnO)_(n) (n>0, nis an integer) may be used.

For example, an In—Ga—Zn-based oxide with an atomic ratio ofIn:Ga:Zn=1:1:1, In:Ga:Zn=3:1:2, or In:Ga:Zn=2:1:3, or any of oxideswhose composition is in the neighborhood of the above compositions canbe used.

It is preferable that hydrogen or water be contained in the oxidesemiconductor film as little as possible in the formation step of theoxide semiconductor film. For example, as pretreatment of the formationstep of the oxide semiconductor film, it is preferable that thesubstrate 102 provided with the base insulating film 104 be preheated ina preheating chamber of a sputtering apparatus to remove and evacuateimpurities such as hydrogen and moisture adsorbed to the substrate 102and the base insulating film 104. Further, the oxide semiconductor filmis preferably formed in a deposition chamber from which moisture hasbeen evacuated.

In order to remove the moisture in the preheating chamber and thedeposition chamber, an entrapment vacuum pump, for example, a cryopump,an ion pump, or a titanium sublimation pump is preferably used. Further,an evacuation unit may be a turbo pump provided with a cold trap. Fromthe preheating chamber and the deposition chamber which are evacuatedwith a cryopump, a hydrogen atom, a compound containing a hydrogen atomsuch as water (H₂O) (more preferably, also a compound containing acarbon atom), and the like are removed, whereby the concentration ofimpurities such as hydrogen and moisture in the first semiconductor film106 can be reduced.

Note that in this embodiment, an In—Ga—Zn-based oxide is deposited asthe first semiconductor film 106 by a sputtering method. The firstsemiconductor film 106 can be formed by sputtering in a rare gas(typically argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere of a rare gas and oxygen.

As a target used in a sputtering method for forming an In—Ga—Zn-basedoxide as the first semiconductor film 106, for example, a metal oxidetarget having an atomic ratio of In:Ga:Zn=1:1:1, a metal oxide targethaving an atomic ratio of In:Ga:Zn=3:1:2, or a metal oxide target havingan atomic ratio of In:Ga:Zn=2:1:3 can be used, for example. However, amaterial and composition of a target used for formation of the firstsemiconductor film 106 is not limited to the above.

Further, when the first semiconductor film 106 is formed using theabove-described metal oxide target, the composition of the target isdifferent from that of the thin film formed over the substrate in somecases. For example, when the metal oxide target having a composition ofIn₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio] is used, the composition of theoxide semiconductor film used as the first semiconductor film 106, whichis the thin film, becomes In₂O₃:Ga₂O₃:ZnO=1:1:0.6 to 1:1:0.8 [molarratio] in some cases, though it depends on the film formationconditions. This is because in formation of the oxide semiconductor filmused as the first semiconductor film 106, ZnO is sublimed, or because asputtering rate differs between the components of In₂O₃, Ga₂O₃, and ZnO.

Accordingly, in order that a thin film has desired composition, thecomposition of a metal oxide target needs to be adjusted in advance. Forexample, in order to make the composition of the first semiconductorfilm 106, which is the thin film, be In₂O₃:Ga₂O₃:ZnO=1:1:1 [molarratio], the composition of the metal oxide target is made to beIn₂O₃:Ga₂O₃:ZnO=1:1:1.5 [molar ratio]. In other words, the ZnO contentof the metal oxide target is made higher in advance. The composition ofthe target is not limited to the above value, and can be adjusted asappropriate depending on the film formation conditions or thecomposition of the thin film to be formed. Further, it is preferable toincrease the ZnO content of the metal oxide target because in that case,the crystallinity of the obtained thin film is improved.

The relative density of the metal oxide target is higher than or equalto 90% and lower than or equal to 100%, preferably higher than or equalto 95% and lower than or equal to 99.9%. With the use of a metal oxidetarget with high relative density, the formed first semiconductor film106 can have high density.

It is preferable that a high-purity gas from which impurities such ashydrogen, water, a hydroxyl group, and a hydride are removed be used asa sputtering gas used for the formation of the first semiconductor film106.

Further, the oxide semiconductor film used as the first semiconductorfilm 106 is preferably a c-axis aligned crystalline oxide semiconductor(CAAC-OS) film. Here, the CAAC-OS film that can be used as the firstsemiconductor film 106 will be described in detail below.

The CAAC-OS film is not completely single crystal nor completelyamorphous. The CAAC-OS film is an oxide semiconductor film with acrystal-amorphous mixed phase structure where crystal parts are includedin an amorphous phase. Note that in most cases, the crystal part fitsinside a cube whose one side is less than 100 nm. From an observationimage obtained with a transmission electron microscope (TEM), a boundarybetween an amorphous part and a crystal part in the CAAC-OS film is notclear. Further, with the TEM, a grain boundary in the CAAC-OS film isnot found. Thus, in the CAAC-OS film, a reduction in electron mobilitydue to the grain boundary is suppressed.

In each of the crystal parts included in the CAAC-OS film, a c-axis isaligned in a direction parallel to a normal vector of a surface wherethe CAAC-OS film is formed or a normal vector of a surface of theCAAC-OS film, triangular or hexagonal atomic arrangement which is seenfrom the direction perpendicular to the a-b plane is formed, and metalatoms are arranged in a layered manner or metal atoms and oxygen atomsare arranged in a layered manner when seen from the directionperpendicular to the c-axis. Note that, among crystal parts, thedirections of the a-axis and the b-axis of one crystal part may bedifferent from those of another crystal part. In this specification, asimple term “perpendicular” includes a range from 85° to 95°. Inaddition, a simple term “parallel” includes a range from −5° to 5°.

In the CAAC-OS film, distribution of crystal parts is not necessarilyuniform. For example, in the formation process of the CAAC-OS film, inthe case where crystal growth occurs from a surface side of the oxidesemiconductor film, the proportion of crystal parts in the vicinity ofthe surface of the oxide semiconductor film is higher than that in thevicinity of the surface where the oxide semiconductor film is formed insome cases. Further, when an impurity is added to the CAAC-OS film, thecrystal part in a region to which the impurity is added becomesamorphous in some cases.

Since the c-axes of the crystal parts included in the CAAC-OS film arealigned in the direction parallel to a normal vector of a surface wherethe CAAC-OS film is formed or a normal vector of a surface of theCAAC-OS film, the directions of the c-axes may be different from eachother depending on the shape of the CAAC-OS film (the cross-sectionalshape of the surface where the CAAC-OS film is formed or thecross-sectional shape of the surface of the CAAC-OS film). Note thatwhen the CAAC-OS film is formed, the direction of c-axis of the crystalpart is the direction parallel to a normal vector of the surface wherethe CAAC-OS film is formed or a normal vector of the surface of theCAAC-OS film. The crystal part is formed by film formation or byperforming treatment for crystallization such as heat treatment afterfilm formation.

With the use of the CAAC-OS film in a transistor, a change in theelectrical characteristics of the transistor due to irradiation withvisible light or ultraviolet light can be reduced. Further, a shift anda variation of the threshold voltage can be suppressed. Thus, thetransistor has high reliability.

In a crystal part or a crystalline oxide semiconductor, defects in thebulk can be further reduced. Further, when the surface planarity of thecrystal part or the crystalline oxide semiconductor film is enhanced, atransistor including the oxide semiconductor can have higherfield-effect mobility than a transistor including an amorphous oxidesemiconductor. In order to enhance the surface planarity of the oxidesemiconductor film, the oxide semiconductor is preferably formed over aflat surface. Specifically, the oxide semiconductor is preferably formedover a surface with an average surface roughness (R_(a)) less than orequal to 0.15 nm, preferably less than or equal to 0.1 nm.

Note that R_(a) is obtained by expanding arithmetic mean surfaceroughness, which is defined by JIS B 0601: 2001 (ISO4287: 1997), intothree dimensions so as to be applied to a curved surface. In addition,R_(a) can be expressed as “an average value of the absolute values ofdeviations from a reference surface to a specific surface” and isdefined by the following formula.

$\begin{matrix}{{Ra} = {\frac{1}{S_{0}}{\int_{y_{1}}^{y_{2}}{\int_{x_{1}}^{x_{2}}{{{{f\left( {x,\ y} \right)} - Z_{0}}}{dxdy}}}}}} & \left\lbrack {{Formula}\mspace{14mu} 1} \right\rbrack\end{matrix}$

Here, the specific surface is a surface which is a target of roughnessmeasurement, and is a quadrilateral region which is specified by fourpoints represented by the coordinates (x₁, y₁, f(x₁, y₁)), (x₁, y₂,f(x₁, y₂)), (x₂, y₁, f(x₂, y₁)), and (x₂, y₂, f(x₂, y₂)). Moreover, Sorepresents the area of a rectangle which is obtained by projecting thespecific surface on the xy plane, and Z₀ represents the height of thereference surface (the average height of the specific surface). Further,R_(a) can be measured using an atomic force microscope (AFM).

There are three methods for forming a CAAC-OS film when the CAAC-OS filmis used as the first semiconductor film 106. The first method is to forman oxide semiconductor film at a temperature higher than or equal to200° C. and lower than or equal to 450° C. to form, in the oxidesemiconductor film, crystal parts in which the c-axes are aligned in thedirection parallel to a normal vector of a surface where the oxidesemiconductor film is formed or a normal vector of a surface of theoxide semiconductor film. The second method is to form an oxidesemiconductor film with a small thickness and then heat it at atemperature higher than or equal to 200° C. and lower than or equal to700° C., to form, in the oxide semiconductor film, crystal parts inwhich the c-axes are aligned in the direction parallel to a normalvector of a surface where the oxide semiconductor film is formed or anormal vector of a surface of the oxide semiconductor film. The thirdmethod is to form one oxide semiconductor film with a small thickness,then heat it at a temperature higher than or equal to 200° C. and lowerthan or equal to 700° C., and form another oxide semiconductor film, toform, in the oxide semiconductor film, crystal parts in which the c-axesare aligned in the direction parallel to a normal vector of a surfacewhere the oxide semiconductor film is formed or a normal vector of asurface of the oxide semiconductor film.

By heating the substrate 102 during deposition, the concentration of animpurity such as hydrogen or water in the formed first semiconductorfilm 106 can be reduced. In addition, damage by sputtering can bereduced, which is preferable. The first semiconductor film 106 may beformed by an atomic layer deposition (ALD) method, an evaporationmethod, a coating method, or the like.

Note that when a crystalline (single crystal or microcrystalline) oxidesemiconductor film other than a CAAC-OS film is formed as the firstsemiconductor film 106, there is no particular limitation on thedeposition temperature.

In this embodiment, as a method of forming the first semiconductor film106, the oxide semiconductor film is etched by a dry etching method. Asan etching gas, BCl₃, Cl₂, O₂, or the like can be used. A dry etchingapparatus using a high-density plasma source such as ECR or ICP can beused to improve an etching rate.

After the first semiconductor film 106 is formed, heat treatment may beperformed on the first semiconductor film 106. The temperature of theheat treatment is higher than or equal to 300° C. and lower than orequal to 700° C., or lower than the strain point of the substrate.Through the heat treatment, excess hydrogen (including water and ahydroxyl group) can be removed from the oxide semiconductor film used asthe first semiconductor film 106. Note that the heat treatment is alsoreferred to as dehydration treatment (dehydrogenation treatment) in thisspecification and the like in some cases.

The heat treatment can be performed in such a manner that, for example,an object to be processed is introduced into an electric furnace inwhich a resistance heater or the like is used and heated at 450° C. in anitrogen atmosphere for an hour. During the heat treatment, the firstsemiconductor film 106 is not exposed to the air to prevent entry ofwater and hydrogen.

The heat treatment apparatus is not limited to the electric furnace andmay be an apparatus for heating an object to be processed by thermalconduction or thermal radiation from a medium such as a heated gas. Forexample, a rapid thermal anneal (RTA) apparatus such as a gas rapidthermal anneal (GRTA) apparatus or a lamp rapid thermal anneal (LRTA)apparatus can be used. An LRTA apparatus is an apparatus for heating anobject to be processed by radiation of light (an electromagnetic wave)emitted from a lamp such as a halogen lamp, a metal halide lamp, a xenonarc lamp, a carbon arc lamp, a high pressure sodium lamp, or a highpressure mercury lamp. A GRTA apparatus is an apparatus for performingheat treatment using a high-temperature gas. As the gas, an inert gaswhich does not react with an object to be processed by heat treatment,such as nitrogen or a rare gas such as argon is used.

For example, as the heat treatment, the GRTA process may be performed asfollows. The object is put in a heated inert gas atmosphere, heated forseveral minutes, and taken out of the inert gas atmosphere. The GRTAprocess enables high-temperature heat treatment for a short time.Moreover, the GRTA process can be employed even when the temperatureexceeds the upper temperature limit of the object. Note that the inertgas may be changed to a gas including oxygen during the process.

Note that as the inert gas atmosphere, an atmosphere that containsnitrogen or a rare gas (e.g., helium, neon, or argon) as its maincomponent and does not contain water, hydrogen, or the like ispreferably used. For example, the purity of nitrogen or a rare gas suchas helium, neon, or argon introduced into a heat treatment apparatus is6 N (99.9999%) or higher, preferably 7 N (99.99999%) or higher (that is,the impurity concentration is 1 ppm or lower, preferably 0.1 ppm orlower).

Through the dehydration treatment (dehydrogenation treatment), oxygenthat is a main component material of an oxide semiconductor film mightbe eliminated and thus might be reduced. An oxygen vacancy exists in aportion where oxygen is eliminated in an oxide semiconductor film, and adonor level which leads to a change in the electrical characteristics ofa transistor is formed owing to the oxygen vacancy. Therefore, in thecase where the dehydration treatment (dehydrogenation treatment) isperformed, oxygen is preferably supplied to the oxide semiconductorfilm. By supply of oxygen to the oxide semiconductor film, an oxygenvacancy in the film can be repaired.

The oxygen vacancy in the oxide semiconductor film may be repaired inthe following manner for example: after the oxide semiconductor film issubjected to the dehydration treatment (dehydrogenation treatment), ahigh-purity oxygen gas, a high-purity nitrous oxide gas, or ultra dryair (the moisture amount is less than or equal to 20 ppm (−55° C. byconversion into a dew point), preferably less than or equal to 1 ppm,more preferably less than or equal to 10 ppb, in the measurement withthe use of a dew point meter of a cavity ring down laser spectroscopy(CRDS) system) is introduced into the same furnace. It is preferablethat water, hydrogen, and the like be not contained in the oxygen gas orthe nitrous oxide gas. The purity of the oxygen gas or the nitrous oxidegas which is introduced into the heat treatment apparatus is preferably6N (99.9999%) or higher, more preferably 7N (99.99999%) or higher (i.e.,the impurity concentration in the oxygen gas or the nitrous oxide gas ispreferably 1 ppm or lower, more preferably 0.1 ppm or lower).

As an example of a method of supplying oxygen to the oxide semiconductorfilm, oxygen (including at least any one of oxygen radicals, oxygenatoms, and oxygen ions) is added to the oxide semiconductor film inorder to supply oxygen to the oxide semiconductor film. An ionimplantation method, an ion doping method, a plasma immersion ionimplantation method, plasma treatment, or the like can be used as amethod of adding oxygen.

As another example of a method of supplying oxygen to the oxidesemiconductor film used as the first semiconductor film 106, the baseinsulating film 104, the first gate insulating film 110 to be formedlater, or the like is heated and part of oxygen is released.

As described above, after the oxide semiconductor film is formed, it ispreferable that the dehydration treatment (dehydrogenation treatment) beperformed to remove hydrogen or moisture from the oxide semiconductorfilm, so that the oxide semiconductor film is highly purified so as notto contain an impurity as much as possible, and oxygen whose amount isreduced in the dehydration treatment (dehydrogenation treatment) beadded to the oxide semiconductor film or excess oxygen be supplied torepair oxygen vacancies in the oxide semiconductor film. In thisspecification and the like, supplying oxygen to an oxide semiconductorfilm may be expressed as oxygen adding treatment or treatment for makingthe oxygen content of an oxide semiconductor film be in excess of thatin the stoichiometric composition may be expressed as treatment formaking an oxygen-excess state.

Note that in the above-described method, the dehydration treatment(dehydrogenation treatment) and the oxygen adding treatment areperformed after the oxide semiconductor film is processed into an islandshape; however, one embodiment of the disclosed invention is notconstrued as being limited thereto. Such treatment may be performedbefore the oxide semiconductor film is processed to have an islandshape. Alternatively, after the interlayer insulating film 114 isformed, heat treatment may be performed so that oxygen is supplied fromthe base insulating film 104, the first gate insulating film 110, or thelike to the oxide semiconductor film.

In this manner, hydrogen or moisture is removed from the oxidesemiconductor film that can be used as the first semiconductor film 106by the dehydration treatment (dehydrogenation treatment) and oxygenvacancies therein are repaired by the oxygen adding treatment, wherebythe oxide semiconductor film can be turned into an electrically i-type(intrinsic) or substantially i-type oxide semiconductor film. The oxidesemiconductor film formed in such a manner contains extremely few (closeto zero) carriers derived from a donor, and the carrier concentrationtherein is lower than 1×10¹⁴/cm³, preferably lower than 1×10¹²/cm³, morepreferably lower than 1×10¹¹/cm³.

In the case where the oxide semiconductor film is used as the firstsemiconductor film 106, the oxide semiconductor film is preferablyhighly purified so as to hardly contain impurities such as copper,aluminum, and chlorine. It is preferable that steps through which theseimpurities do not enter the oxide semiconductor film or are not attachedto the surface of the oxide semiconductor film be selected asappropriate as the manufacturing steps of the transistor. When theseimpurities are attached to the surface of the oxide semiconductor film,it is preferable to remove the impurities on the surface of the oxidesemiconductor film by exposure to oxalic acid, diluted hydrofluoricacid, or the like or by plasma treatment (e.g., N₂O plasma treatment).Specifically, the copper concentration in the oxide semiconductor filmis 1×10¹⁸ atoms/cm³ or lower, preferably 1×10¹⁷ atoms/cm³ or lower.Further, the aluminum concentration in the oxide semiconductor film is1×10¹⁸ atoms/cm³ or lower. Further, the chlorine concentration in theoxide semiconductor film is 2×10¹⁸ atoms/cm³ or lower.

The oxide semiconductor film is preferably in a supersaturated state inwhich the oxygen content is in excess of that in the stoichiometriccomposition just after its formation. For example, in the case where theoxide semiconductor film is formed by a sputtering method, the film ispreferably formed under a condition that the proportion of oxygen in adeposition gas is large, in particular, under an oxygen atmosphere(oxygen gas: 100%). For example, when the oxide semiconductor film isformed using an In—Ga—Zn-based oxide (IGZO) under a condition that theproportion of oxygen in the deposition gas is large (in particular,oxygen gas: 100%), release of Zn from the film can be reduced even whenthe deposition temperature is 300° C. or higher.

The oxide semiconductor film is preferably an oxide semiconductor filmwhich is highly purified by sufficient removal of impurities such ashydrogen or by sufficient supply of oxygen so as to be supersaturatedwith oxygen. Specifically, the hydrogen concentration in the oxidesemiconductor film is 5×10¹⁹ atoms/cm³ or lower, preferably 5×10¹⁸atoms/cm³ or lower, more preferably 5×10¹⁷ atoms/cm³ or lower. Note thatthe above hydrogen concentration in the oxide semiconductor film ismeasured by secondary ion mass spectrometry (SIMS). In order that theoxide semiconductor film is supersaturated with oxygen by sufficientsupply of oxygen, an insulating film containing excess oxygen (such as aSiO_(x) film) is preferably provided so as to surround and be in contactwith the oxide semiconductor film.

As the insulating film containing excess oxygen, a SiO_(x) film or asilicon oxynitride film including a large amount of oxygen by adjustingdeposition conditions as appropriate in a PE-CVD method or a sputteringmethod is used. In the case where the insulating film is formed so as tofurther contain excess oxygen, oxygen is added to the insulating film byan ion implantation method, an ion doping method, or plasma treatment.

In the case where the hydrogen concentration in the insulating filmcontaining excess oxygen is higher than or equal to 7.2×10²⁰ atoms/cm³,variation in initial characteristics of transistors is increased, an Llength dependence of electrical characteristics of a transistor isincreased, and a transistor significantly deteriorates in the BT stresstest; therefore, the hydrogen concentration in the insulating filmcontaining excess oxygen should be lower than 7.2×10²⁰ atoms/cm³. Inother words, the hydrogen concentration in the oxide semiconductor filmis preferably lower than or equal to 5×10¹⁹ atoms/cm³, and the hydrogenconcentration in the insulating film containing excess oxygen ispreferably lower than 7.2×10²⁰ atoms/cm³.

In addition, a blocking film (such as an AlO_(x) film) for preventingoxygen from being released from the oxide semiconductor film ispreferably provided so as to surround the oxide semiconductor film andbe positioned outside the insulating film containing excess oxygen.

When the oxide semiconductor film is surrounded by the insulating filmcontaining excess oxygen or the blocking film, the oxygen content of theoxide semiconductor film can be substantially the same as that in thestoichiometric composition, or can be in excess of that in thestoichiometric composition i.e., the oxide semiconductor film can besupersaturated with oxygen. For example, in the case where the oxidesemiconductor film is formed of IGZO, an example of stoichiometriccomposition is In:Ga:Zn:O=1:1:1:4 [atomic ratio]; thus the ratio ofoxygen atoms is 4 or larger.

Next, a conductive film is formed over the first semiconductor film 106,and a photolithography step and an etching step are performed; thus, thefirst source electrode 108 a and the first drain electrode 108 b areformed (see FIG. 2B).

The conductive film that can be used for the first source electrode 108a and the first drain electrode 108 b is formed using a material thatcan withstand heat treatment performed later. For example, a metal filmcontaining an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or ametal nitride film containing any of the above elements as a component(a titanium nitride film, a molybdenum nitride film, or a tungstennitride film) can be used. It is also possible to use a structure inwhich a film of a high-melting-point metal such as Ti, Mo, or W or ametal nitride film thereof (e.g., a titanium nitride film, a molybdenumnitride film, or a tungsten nitride film) is stacked over and/or below ametal film of Al, Cu, or the like.

Alternatively, the conductive film used for the first source electrode108 a and the first drain electrode 108 b may be formed using aconductive metal oxide. Examples of the conductive metal oxide areindium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), indiumoxide-tin oxide (In₂O₃—SnO₂, abbreviated to ITO), indium oxide-zincoxide (In₂O₃—ZnO), or any of these metal oxide materials in whichsilicon oxide is contained.

Next, the first gate insulating film 110 is formed over the firstsemiconductor film 106, the first source electrode 108 a, and the firstdrain electrode 108 b (see FIG. 2C).

The thickness of the first gate insulating film 110 can be greater thanor equal to 1 nm and less than or equal to 500 nm, for example. There isno particular limitation on a method of forming the first gateinsulating film 110; for example, a sputtering method, an MBE method, aPE-CVD method, a pulsed laser deposition method, an ALD method, or thelike can be used as appropriate.

The first gate insulating film 110 can be formed using silicon oxide,gallium oxide, aluminum oxide, silicon nitride, silicon oxynitride,aluminum oxynitride, silicon nitride oxide, or the like. In the casewhere the first semiconductor film 106 is the oxide semiconductor film,the first gate insulating film 110 is preferably an insulating film inwhich a portion in contact with the first semiconductor film 106contains excess oxygen. In particular, the oxygen content of the firstgate insulating film 110 is preferably in excess of at least that in thestoichiometric composition. For example, in the case where a siliconoxide film is used as the first gate insulating film 110, a film ofSiO_(2+α) (α>0) is preferably used. In this embodiment, a silicon oxidefilm of SiO_(2+α) (α>0) is used as the first gate insulating film 110.With the use of the silicon oxide film as the first gate insulating film110, oxygen can be supplied to the oxide semiconductor film used as thefirst semiconductor film 106 from the first gate insulating film 110 aswell as from the base insulating film 104 and favorable electricalcharacteristics can be obtained.

The first gate insulating film 110 can be formed using a high-k materialsuch as hafnium oxide, yttrium oxide, hafnium silicate (HfSi_(x)O_(y)(x>0, y>0)), hafnium silicate to which nitrogen is added(HfSi_(x)O_(y)N_(z) (x>0, y>0, z>0)), hafnium aluminate (HfAl_(x)O_(y)(x>0, y>0)), or lanthanum oxide. With the use of such a material, gateleakage current can be reduced. Further, the first gate insulating film110 may have a single-layer structure or a layered structure.

Next, a conductive film to be the gate electrode (including a wiringformed using the same layer as the gate electrode) is formed over thefirst gate insulating film 110. The conductive film to be the gateelectrode can be formed using a metal material such as molybdenum,titanium, tantalum, tungsten, aluminum, copper, neodymium, or scandium,or an alloy material including any of these materials as its maincomponent, for example. Alternatively, the conductive film to be thegate electrode may be formed using a conductive metal oxide. As theconductive metal oxide, indium oxide (In₂O₃), tin oxide (SnO₂), zincoxide (ZnO), indium tin oxide (In₂O₃—SnO₂, which is abbreviated to ITOin some cases), indium zinc oxide (In₂O₃—ZnO), or any of these metaloxide materials in which silicon or silicon oxide is included can beused. The conductive film to be the gate electrode can be formed to havea single-layer structure or a layered structure using any of the abovematerials. There is no particular limitation on the method for formingthe conductive film, and a variety of film formation methods such as anevaporation method, a PE-CVD method, a sputtering method, and a spincoating method can be employed.

Next, a resist mask is formed over the conductive film through aphotolithography step and selective etching is performed, so that thegate electrode 112 is formed. Then, the resist mask is removed. At thisstage, the first transistor 150 is formed (see FIG. 2C).

The resist mask used for forming the gate electrode 112 may be formed byan inkjet method. Formation of the resist mask by an inkjet method needsno photomask; thus, manufacturing cost can be reduced. For etching thegate electrode 112, wet etching or dry etching, or both of them may beemployed.

Then, an insulating film 113 is formed over the first gate insulatingfilm 110 and the gate electrode 112 (see FIG. 2D).

The insulating film 113 is preferably formed using an inorganicinsulating film and may be formed as a single layer or a stacked layerof any of oxide insulating films such as a silicon oxide film, a siliconoxynitride film, an aluminum oxide film, an aluminum oxynitride film, agallium oxide film, and a hafnium oxide film. Further, over the aboveoxide insulating film, a single layer or a stacked layer of any ofnitride insulating films such as a silicon nitride film, a siliconnitride oxide film, an aluminum nitride film, and an aluminum nitrideoxide film may be formed. For example, by a sputtering method, a siliconoxide film and an aluminum oxide film are stacked from the gateelectrode 112 side.

Further, a dense inorganic insulating film may be provided as theinsulating film 113. For example, an aluminum oxide film is formed by asputtering method. When the aluminum oxide film has high density (thefilm density is higher than or equal to 3.2 g/cm³, preferably higherthan or equal to 3.6 g/cm³), the first transistor 150 can have stableelectrical characteristics. The film density can be measured byRutherford backscattering spectrometry (RBS) or X-ray reflection (XRR).

The aluminum oxide film that can be used as the inorganic insulatingfilm provided over the first transistor 150 has a high shielding effect(blocking effect) of preventing penetration of both oxygen andimpurities such as hydrogen and moisture. Therefore, in the case wherethe first semiconductor film 106 is the oxide semiconductor film, in andafter the manufacturing process, the aluminum oxide film functions as aprotective film for preventing entry of impurities such as hydrogen andmoisture, which cause a change, into the oxide semiconductor film, andfor preventing release of oxygen, which is a main component material ofthe oxide semiconductor film.

A planarization insulating film may be formed over the insulating film113. For the planarization insulating film, a heat-resistant organicmaterial such as an acrylic-based resin, a polyimide-based resin, abenzocyclobutene-based resin, a polyamide-based resin, or an epoxy-basedresin can be used. As an alternative to such organic materials, it ispossible to use a low-dielectric constant material (low-k material), asiloxane-based resin, or the like. Note that the planarizing insulatingfilm may be formed by stacking a plurality of insulating films formed ofany of these materials.

Next, polishing (cutting or grinding) treatment is performed on theinsulating film 113 to remove part of the insulating film 113, so thatthe gate electrode 112 is exposed. By the polishing treatment, theinsulating film 113 over the gate electrode 112 is removed, and theinterlayer insulating film 114 is formed (see FIG. 3A).

As the polishing (cutting or grinding) treatment, chemical mechanicalpolishing (CMP) treatment can be preferably used.

Note that the CMP treatment may be performed only once or plural times.When the CMP treatment is performed plural times, first polishing ispreferably performed with a high polishing rate followed by finalpolishing with a low polishing rate. By performing polishing steps withdifferent polishing rates in combination, the planarity of the polishedsurface can be further improved.

Polishing (cutting or grinding) treatment other than the above CMPtreatment may be used. Alternatively, the polishing treatment such asthe CMP treatment may be combined with etching (dry etching or wetetching) treatment, plasma treatment, or the like. For example, afterthe CMP treatment, dry etching treatment or plasma treatment (e.g.,reverse sputtering) may be performed in order to improve the planarityof the surface to be processed. In the case where the polishingtreatment is combined with etching treatment, plasma treatment, or thelike, the order of the steps may be set as appropriate, withoutparticular limitation, depending on the material, thickness, androughness of the surface of the insulating film 113.

In this embodiment, a top end of the gate electrode 112 and a top end ofthe interlayer insulating film 114 are substantially in alignment witheach other. Note that the shape of the gate electrode 112 depends on theconditions of the polishing treatment performed on the insulating film113. For example, in some cases, the gate electrode 112 in the filmthickness direction is not level with the interlayer insulating film 114in the film thickness direction.

Next, the second gate insulating film 116 is formed over the interlayerinsulating film 114 and the gate electrode 112 (see FIG. 3B).

The second gate insulating film 116 can be formed using a material and amethod similar to those for the first gate insulating film 110.

Then, an oxide semiconductor film is formed over the second gateinsulating film 116, and a photolithography step and an etching step areperformed; thus, the second semiconductor film 118 is formed (see FIG.3B). The oxide semiconductor film used as the second semiconductor film118 is preferably a CAAC-OS film.

The second semiconductor film 118 can be formed using a material and amethod similar to those for the first semiconductor film 106.

Next, a conductive film is formed over the second semiconductor film118, and a photolithography step and an etching step are performed;thus, the second source electrode 120 a and the second drain electrode120 b are formed. At this stage, the second transistor 152 is formed(see FIG. 3C).

The second source electrode 120 a and the second drain electrode 120 bcan be formed using a material and a method similar to those for thefirst source electrode 108 a and the first drain electrode 108 b.

Next, the insulating film 122 and the planarization insulating film 124are formed over the second transistor 152 (see FIG. 3D).

The insulating film 122 can be formed using a material and a methodsimilar to those for the insulating film 113. For the planarizationinsulating film 124, a heat-resistant organic material such as anacrylic-based resin, a polyimide-based resin, a benzocyclobutene-basedresin, a polyamide-based resin, or an epoxy-based resin can be used. Asan alternative to such organic materials, it is possible to use alow-dielectric constant material (low-k material), a siloxane-basedresin, or the like. Note that the planarizing insulating film may beformed by stacking a plurality of insulating films formed of any ofthese materials.

Through the above steps, a semiconductor device of one embodiment of thepresent invention is formed.

In the semiconductor device described in this embodiment, at least oneof the first semiconductor film and the second semiconductor film is anoxide semiconductor film. With the use of an oxide semiconductor filmfor the first semiconductor film or the second semiconductor film, thesemiconductor device can have high field-effect mobility and operate athigh speed.

By employing a structure in which the first transistor including thefirst semiconductor film and the second transistor including the secondsemiconductor film are stacked and have the gate electrode in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor and the second transistor have the gateelectrode in common, the number of manufacturing steps, materials, orthe like of the transistors can be reduced.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 2

In this embodiment, a modification example of the semiconductor deviceillustrated in FIGS. 1A and 1B of Embodiment 1 and a manufacturingmethod which is different from the manufacturing method of thesemiconductor device illustrated in FIGS. 2A to 2D and FIGS. 3A to 3D ofEmbodiment 1 will be described with reference to FIGS. 4A and 4B, FIGS.5A to 5D, and FIGS. 6A to 6D. Note that portions similar to those inFIGS. 1A and 1B, FIGS. 2A to 2D, and FIGS. 3A to 3D are denoted by thesame reference numerals, and description thereof is skipped.

<Structural Example of Semiconductor Device (Modification Example 1)>

FIGS. 4A and 4B are a top view and a cross-sectional view, respectively,of a transistor as one embodiment of a semiconductor device. Note thatFIG. 4A is a top view, and FIG. 4B is a cross-sectional view taken alongline X2-Y2 in FIG. 4A. Note that in FIG. 4A, some components of thetransistor (e.g., the first gate insulating film 110) are notillustrated for simplicity.

The semiconductor device illustrated in FIGS. 4A and 4B includes a firsttransistor 160 and a second transistor 162. The first transistor 160includes the base insulating film 104 formed over the substrate 102; thefirst semiconductor film 106 formed over the base insulating film 104;the first source electrode 108 a and the first drain electrode 108 bformed over the first semiconductor film 106; the first gate insulatingfilm 110 formed over the first semiconductor film 106; and the gateelectrode 112 which is in contact with the first gate insulating film110 and overlaps with the first semiconductor film 106. The secondtransistor 162 includes the second gate insulating film 116 formed overthe gate electrode 112; the second semiconductor film 118 which is incontact with the second gate insulating film 116 and overlaps with thegate electrode 112; a protective insulating film 126 formed over thesecond semiconductor film 118; and the second source electrode 120 a andthe second drain electrode 120 b which are formed over the protectiveinsulating film 126 and are electrically connected to the secondsemiconductor film 118. The first transistor 160 and the secondtransistor 162 are stacked.

The semiconductor device illustrated in FIGS. 4A and 4B may include theinterlayer insulating film 114 between the first transistor 160 and thesecond transistor 162, and may include the insulating film 122 and theplanarization insulating film 124 over the second transistor 162.

Note that at least one of the first semiconductor film 106 and thesecond semiconductor film 118 is an oxide semiconductor film. With theuse of an oxide semiconductor film for the first semiconductor film 106or the second semiconductor film 118, the semiconductor device can havehigh field-effect mobility and operate at high speed.

In this embodiment, a structure in which an oxide semiconductor film isused for each of the first semiconductor film 106 and the secondsemiconductor film 118 is employed. In the case where the firstsemiconductor film 106 and the second semiconductor film 118 arepreferably equivalent in electrical characteristics, it is effective touse an oxide semiconductor film for each of the first semiconductor film106 and the second semiconductor film 118 in this manner.

The first transistor 160 and the second transistor 162 have the gateelectrode 112 in common. That is, the first transistor 160 is a top-gatetransistor in which the gate electrode 112 is provided over the firstsemiconductor film 106 with the first gate insulating film 110therebetween, and the second transistor 162 is a bottom-gate transistorin which the second semiconductor film 118 is provided over the gateelectrode 112 with the second gate insulating film 116 therebetween. Byemploying a structure in which the first transistor 160 and the secondtransistor 162 are stacked and have the gate electrode 112 in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor 160 and the second transistor 162 have thegate electrode 112 in common, the number of manufacturing steps,materials, or the like of the transistors can be reduced.

The semiconductor device including the first transistor 160 and thesecond transistor 162 in this embodiment is different from thesemiconductor device including the first transistor 150 and the secondtransistor 152 in Embodiment 1 in the structures of the transistors.

Specifically, the first transistor 160 in this embodiment is differentfrom the first transistor 150 in the structure of the first gateinsulating film 110; in this embodiment, the first gate insulating film110 is processed into an island shape and is formed only under the gateelectrode 112.

Unlike the second transistor 152, the second transistor 162 in thisembodiment includes the protective insulating film 126 over the secondsemiconductor film 118. Since the protective insulating film 126 isprovided, the second semiconductor film 118 can be protected when thesecond source electrode 120 a and the second drain electrode 120 b areprocessed. Note that although the protective insulating film 126protects a top surface and a side surface of the second semiconductorfilm 118 in this embodiment, one embodiment of the present invention isnot limited thereto. For example, the protective insulating film 126having an island shape may be formed only over a channel formationportion of the second semiconductor film 118.

Note that the details of the other components will be described later indescription of a method of manufacturing the semiconductor device withreference to FIGS. 5A to 5D and FIGS. 6A to 6D.

<Method 2 of Manufacturing Semiconductor Device>

Hereinafter, one example of a method of manufacturing the semiconductordevice illustrated in FIGS. 4A and 4B of this embodiment will bedescribed with reference to FIGS. 5A to 5D and FIGS. 6A to 6D.

First, the base insulating film 104 and the first semiconductor film 106are formed over the substrate 102 (see FIG. 5A).

Note that the substrate 102, the base insulating film 104, and the firstsemiconductor film 106 can have structures similar to those inEmbodiment 1.

Next, an insulating film and a conductive film are formed over the firstsemiconductor film 106, and a photolithography step and an etching stepare performed; thus, the first gate insulating film 110 and the gateelectrode 112 are formed (see FIG. 5B).

The first gate insulating film 110 can be formed in such a manner that,after the gate electrode 112 is formed, etching is performed with thegate electrode 112 used as a mask.

Note that the first gate insulating film 110 and the gate electrode 112can have structures similar to those in Embodiment 1.

Next, a conductive film is formed over the first semiconductor film 106,and a photolithography step and an etching step are performed; thus, thefirst source electrode 108 a and the first drain electrode 108 b areformed. At this stage, the first transistor 160 is formed (see FIG. 5C).

The first source electrode 108 a and the first drain electrode 108 b canhave a structure similar to that in Embodiment 1.

Next, the insulating film 113 is formed over the first transistor 160(see FIG. 5D).

The insulating film 113 can have a structure similar to that inEmbodiment 1.

Next, polishing (cutting or grinding) treatment is performed on theinsulating film 113 to remove part of the insulating film 113, so thatthe gate electrode 112 is exposed. By the polishing treatment, theinsulating film 113 over the gate electrode 112 is removed, and theinterlayer insulating film 114 is formed (see FIG. 6A).

As the polishing (cutting or grinding) method, a method similar to thatin Embodiment 1 can be employed. In this embodiment, a top end of thegate electrode 112 and a top end of the interlayer insulating film 114are substantially in alignment with each other. Note that the shape ofthe gate electrode 112 depends on the conditions of the polishingtreatment performed on the insulating film 113. For example, in somecases, the gate electrode 112 in the film thickness direction is notlevel with the interlayer insulating film 114 in the film thicknessdirection.

Next, the second gate insulating film 116, the second semiconductor film118, and an insulating film 125 are formed over the interlayerinsulating film 114 and the gate electrode 112 (see FIG. 6B).

The second gate insulating film 116 and the second semiconductor film118 can have structures similar to those in Embodiment 1. The insulatingfilm 125 can be formed using silicon oxide, gallium oxide, aluminumoxide, silicon nitride, silicon oxynitride, aluminum oxynitride, siliconnitride oxide, or the like. In the case where the second semiconductorfilm 118 is an oxide semiconductor film, a portion of the insulatingfilm 125 in contact with the second semiconductor film 118 preferablycontains oxygen. In particular, it is preferable that the oxygen contentof the insulating film 125 be in excess of that in the stoichiometriccomposition. For example, in the case where a silicon oxide film is usedas the insulating film 125, the composition formula is preferablySiO_(2+α) (α>0). In this embodiment, a silicon oxide film of SiO_(2+α)(α>0) is used as the insulating film 125. With the use of the siliconoxide film as the insulating film 125, oxygen can be supplied to theoxide semiconductor film used as the second semiconductor film 118 andfavorable electrical characteristics can be obtained.

Then, a resist mask is formed over the insulating film 125 by aphotolithography step and etching is selectively performed; thus,openings reaching the second semiconductor film 118 are formed and theprotective insulating film 126 is formed from the insulating film 125.After that, the resist mask is removed, so that the second sourceelectrode 120 a and the second drain electrode 120 b are formed so as tofill the openings. At this stage, the second transistor 162 is formed(see FIG. 6C).

Next, the insulating film 122 and the planarization insulating film 124are formed over the second transistor 162 (see FIG. 6D).

Note that the second source electrode 120 a and the second drainelectrode 120 b, the insulating film 122, and the planarizationinsulating film 124 can have structures similar to those in Embodiment1.

Through the above steps, a semiconductor device of one embodiment of thepresent invention is formed.

In the semiconductor device described in this embodiment, at least oneof the first semiconductor film and the second semiconductor film is anoxide semiconductor film. With the use of an oxide semiconductor filmfor the first semiconductor film or the second semiconductor film, thesemiconductor device can have high field-effect mobility and operate athigh speed.

By employing a structure in which the first transistor including thefirst semiconductor film and the second transistor including the secondsemiconductor film are stacked and have the gate electrode in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor and the second transistor have the gateelectrode in common, the number of manufacturing steps, materials, orthe like of the transistors can be reduced.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 3

In this embodiment, a modification example of the semiconductor deviceillustrated in FIGS. 1A and 1B of Embodiment 1, or a modificationexample of the semiconductor device illustrated in FIGS. 4A and 4B ofEmbodiment 2 will be described with reference to FIGS. 7A and 7B. Notethat portions similar to those in FIGS. 1A and 1B and FIGS. 4A and 4Bare denoted by the same reference numerals, and description thereof isskipped.

<Structural Example of Semiconductor Device (Modification Example 2)>

FIGS. 7A and 7B are a top view and a cross-sectional view, respectively,of a transistor as one embodiment of a semiconductor device. Note thatFIG. 7A is a top view, and FIG. 7B is a cross-sectional view taken alongline X3-Y3 in FIG. 7A. Note that in FIG. 7A, some components of thetransistor (e.g., the first gate insulating film 110) are notillustrated for simplicity.

The semiconductor device illustrated in FIGS. 7A and 7B includes a firsttransistor 170 and a second transistor 172. The first transistor 170includes the base insulating film 104 formed over the substrate 102; thefirst source electrode 108 a and the first drain electrode 108 b formedover the base insulating film 104; the first semiconductor film 106formed over the first source electrode 108 a and the first drainelectrode 108 b; the first gate insulating film 110 formed over thefirst semiconductor film 106; and the gate electrode 112 which is incontact with the first gate insulating film 110 and overlaps with thefirst semiconductor film 106. The second transistor 172 includes thesecond gate insulating film 116 formed over the gate electrode 112; thesecond source electrode 120 a and the second drain electrode 120 bformed over the second gate insulating film 116; and the secondsemiconductor film 118 which is in contact with the second gateinsulating film 116, overlaps with the gate electrode 112, and iselectrically connected to the second source electrode 120 a and thesecond drain electrode 120 b. The first transistor 170 and the secondtransistor 172 are stacked.

The semiconductor device illustrated in FIGS. 7A and 7B may include theinterlayer insulating film 114 between the first transistor 170 and thesecond transistor 172, and may include the insulating film 122 and theplanarization insulating film 124 over the second transistor 172.

Note that at least one of the first semiconductor film 106 and thesecond semiconductor film 118 is an oxide semiconductor film. With theuse of an oxide semiconductor film for the first semiconductor film 106or the second semiconductor film 118, the semiconductor device can havehigh field-effect mobility and operate at high speed.

In this embodiment, a structure in which an oxide semiconductor film isused for each of the first semiconductor film 106 and the secondsemiconductor film 118 is employed. In the case where the firstsemiconductor film 106 and the second semiconductor film 118 arepreferably equivalent in electrical characteristics, it is effective touse an oxide semiconductor film for each of the first semiconductor film106 and the second semiconductor film 118 in this manner.

The first transistor 170 and the second transistor 172 have the gateelectrode 112 in common. That is, the first transistor 170 is a top-gatetransistor in which the gate electrode 112 is provided over the firstsemiconductor film 106 with the first gate insulating film 110therebetween, and the second transistor 172 is a bottom-gate transistorin which the second semiconductor film 118 is provided over the gateelectrode 112 with the second gate insulating film 116 therebetween. Byemploying a structure in which the first transistor 170 and the secondtransistor 172 are stacked and have the gate electrode 112 in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor 170 and the second transistor 172 have thegate electrode 112 in common, the number of manufacturing steps,materials, or the like of the transistors can be reduced.

The semiconductor device including the first transistor 170 and thesecond transistor 172 in this embodiment is different from thesemiconductor device including the first transistor 150 and the secondtransistor 152 in Embodiment 1 in the structures of the transistors.

Specifically, the first transistor 170 in this embodiment is differentfrom the first transistor 150 in the positions of the first sourceelectrode 108 a and the first drain electrode 108 b with respect to thefirst semiconductor film 106. In this embodiment, a so-calledbottom-contact transistor is employed in which the first semiconductorfilm 106 is formed over the first source electrode 108 a and the firstdrain electrode 108 b, and is electrically connected to the first sourceelectrode 108 a and the first drain electrode 108 b on part of the lowersurface of the first semiconductor film 106.

The second transistor 172 in this embodiment is different from thesecond transistor 152 in the positions of the second source electrode120 a and the second drain electrode 120 b with respect to the secondsemiconductor film 118. In this embodiment, a so-called bottom-contacttransistor is employed in which the second semiconductor film 118 isformed over the second source electrode 120 a and the second drainelectrode 120 b, and is electrically connected to the second sourceelectrode 120 a and the second drain electrode 120 b on part of thelower surface of the second semiconductor film 118.

The other components can have structures similar to those in thesemiconductor device described in Embodiment 1 or the semiconductordevice described in Embodiment 2.

The first transistor 170 and the second transistor 172 can bemanufactured in such a manner that the order of forming the firstsemiconductor film 106 and the first source electrode 108 a and thefirst drain electrode 108 b, and the order of forming the secondsemiconductor film 118 and the second source electrode 120 a and thesecond drain electrode 120 b are reversed from those in thesemiconductor device described in Embodiment 1.

In the semiconductor device described in this embodiment, at least oneof the first semiconductor film and the second semiconductor film is anoxide semiconductor film. With the use of an oxide semiconductor filmfor the first semiconductor film or the second semiconductor film, thesemiconductor device can have high field-effect mobility and operate athigh speed.

By employing a structure in which the first transistor including thefirst semiconductor film and the second transistor including the secondsemiconductor film are stacked and have the gate electrode in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor and the second transistor have the gateelectrode in common, the number of manufacturing steps, materials, orthe like of the transistors can be reduced.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 4

In this embodiment, a modification example of the semiconductor deviceillustrated in FIGS. 4A and 4B of Embodiment 2 will be described withreference to FIGS. 8A and 8B. Note that portions similar to those inFIGS. 4A and 4B are denoted by the same reference numerals, anddescription thereof is skipped.

<Structural Example of Semiconductor Device (Modification Example 3)>

FIGS. 8A and 8B are a top view and a cross-sectional view, respectively,of a transistor as one embodiment of a semiconductor device. Note thatFIG. 8A is a top view, and FIG. 8B is a cross-sectional view taken alongline X4-Y4 in FIG. 8A. Note that in FIG. 8A, some components of thetransistor (e.g., the first gate insulating film 110) are notillustrated for simplicity.

The semiconductor device illustrated in FIGS. 8A and 8B includes a firsttransistor 180 and a second transistor 182. The first transistor 180includes the base insulating film 104 formed over the substrate 102; afirst semiconductor film 105 formed over the base insulating film 104;the first source electrode 108 a and the first drain electrode 108 bformed over the first semiconductor film 105; the first gate insulatingfilm 110 formed over the first semiconductor film 105; and the gateelectrode 112 which is in contact with the first gate insulating film110 and overlaps with the first semiconductor film 105. The secondtransistor 182 includes the second gate insulating film 116 formed overthe gate electrode 112; the second semiconductor film 118 which is incontact with the second gate insulating film 116 and overlaps with thegate electrode 112; the protective insulating film 126 formed over thesecond semiconductor film 118; and the second source electrode 120 a andthe second drain electrode 120 b which are formed over the protectiveinsulating film 126 and are electrically connected to the secondsemiconductor film 118. The first transistor 180 and the secondtransistor 182 are stacked.

The semiconductor device illustrated in FIGS. 8A and 8B may include theinterlayer insulating film 114 between the first transistor 180 and thesecond transistor 182, and may include the insulating film 122 and theplanarization insulating film 124 over the second transistor 182.

Note that in this embodiment, the first semiconductor film 105 is asemiconductor film other than an oxide semiconductor film, and thesecond semiconductor film 118 is an oxide semiconductor film. With theuse of an oxide semiconductor film for the second semiconductor film118, the semiconductor device can have high field-effect mobility andoperate at high speed.

Although an oxide semiconductor film is used for the secondsemiconductor film in this embodiment, one embodiment of the presentinvention is not limited thereto. A structure in which an oxidesemiconductor film is used for each of the first semiconductor film andthe second semiconductor film described in any of the above embodiments,or a structure in which an oxide semiconductor film is used for thefirst semiconductor film and a semiconductor film other than an oxidesemiconductor film is used for the second semiconductor film may beemployed.

The first transistor 180 and the second transistor 182 have the gateelectrode 112 in common. That is, the first transistor 180 is a top-gatetransistor in which the gate electrode 112 is provided over the firstsemiconductor film 105 with the first gate insulating film 110therebetween, and the second transistor 182 is a bottom-gate transistorin which the second semiconductor film 118 is provided over the gateelectrode 112 with the second gate insulating film 116 therebetween. Byemploying a structure in which the first transistor 180 and the secondtransistor 182 are stacked and have the gate electrode 112 in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor 180 and the second transistor 182 have thegate electrode 112 in common, the number of manufacturing steps,materials, or the like of the transistors can be reduced.

The semiconductor device including the first transistor 180 and thesecond transistor 182 in this embodiment is different from thesemiconductor device including the first transistor 160 and the secondtransistor 162 in Embodiment 2 in the structure of the first transistor.

Specifically, the first transistor 180 in this embodiment is differentfrom the first transistor 160 in the material for the firstsemiconductor film. In this embodiment, the first semiconductor film 105is a silicon film.

The first semiconductor film 105 is formed using a semiconductor filmother than an oxide semiconductor film, and for example, can be formedusing a silicon film. For the silicon film, amorphous silicon, singlecrystal silicon, polycrystalline silicon, microcrystalline silicon (alsoreferred to as microcrystal silicon) including a crystal region inamorphous silicon, or the like can be used.

In the case where a silicon film is used as the first semiconductor film105, the silicon film can be formed by a PE-CVD method or the like.After the gate electrode 112 is formed, impurities may be injected intothe first semiconductor film 105 with the first gate insulating film 110and the gate electrode 112 used as masks. As the impurities injectedinto the first semiconductor film 105, impurity elements impartingp-type conductivity such as boron, aluminum, and gallium, or impurityelements imparting n-type conductivity such as phosphorus and arseniccan be used.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 5

In this embodiment, a device having a display function (also referred toas display device) that can be manufactured using the semiconductordevice including transistors in any of Embodiments 1 to 4 will bedescribed with reference to FIGS. 9A to 9C and FIGS. 10A and 10B.Further, part or the whole of a driver circuit driving the displaydevice is formed over the same substrate as a pixel portion with the useof the semiconductor device including transistors in any of Embodiments1 to 4, whereby a system-on-panel can be obtained.

FIG. 9A is a top view of the system-on-panel including the pixel portionas one embodiment of the display device. FIG. 9B and FIG. 9C eachillustrate a pixel structure that can be used for the pixel portion.

In FIG. 9A, a sealant 406 is provided so as to surround a pixel portion402, a source driver circuit portion 403, and a gate driver circuitportion 404 which are provided over a first substrate 401. The secondsubstrate 407 is provided over the pixel portion 402, the source drivercircuit portion 403, and the gate driver circuit portion 404. Thus, thepixel portion 402, the source driver circuit portion 403, and the gatedriver circuit portion 404 are sealed together with a display element bythe first substrate 401, the sealant 406, and the second substrate 407.

In FIG. 9A, a flexible printed circuit (FPC) terminal portion 405 whichis electrically connected to the pixel portion 402, the source drivercircuit portion 403, and the gate driver circuit portion 404 is providedin a region over the first substrate 401 that is different from theregion surrounded by the sealant 406. An FPC 418 is connected to the FPCterminal portion 405. Signals and potentials applied to the pixelportion 402, the source driver circuit portion 403, and the gate drivercircuit portion 404 are supplied through the FPC 418.

In FIG. 9A, an example in which the source driver circuit portion 403and the gate driver circuit portion 404 are formed over the firstsubstrate 401 where the pixel portion 402 is also formed is described;however, the structure is not limited thereto. For example, only thegate driver circuit portion 404 may be formed over the first substrate401 or only the source driver circuit portion 403 may be formed over thefirst substrate 401. In this case, a substrate where a source drivercircuit, a gate driver circuit, or the like is formed (e.g., a drivercircuit substrate formed using a single crystal semiconductor film or apolycrystalline semiconductor film) may be mounted on the firstsubstrate 401.

There is no particular limitation on the connection method of aseparately formed driver circuit substrate; a chip on glass (COG)method, a wire bonding method, a tape automated bonding (TAB) method, orthe like can be used.

In addition, the display device may include a panel in which a displayelement is sealed and a module in which an IC and the like including acontroller are mounted on the panel.

Note that a display device in this specification means an image displaydevice, a display device, or a light source (including a lightingdevice). Furthermore, the display device also includes the followingmodules in its category: a module to which a connector such as an FPC, aTAB tape, or a tape carrier package (TCP) is attached; a module having aTAB tape or a TCP at the tip of which a printed wiring board isprovided; and a module in which a driver circuit substrate or anintegrated circuit (IC) is directly mounted on a display element by aCOG method.

In addition, the pixel portion 402, the source driver circuit portion403, and the gate driver circuit portion 404 provided over the firstsubstrate 401 each include a plurality of semiconductor devicesincluding transistors to which the semiconductor devices includingtransistors in any of Embodiments 1 to 4 can be applied.

Here, specific pixel structures of the pixel portion 402 in the displaydevice illustrated in FIG. 9A will be described with reference to FIGS.9B and 9C.

FIGS. 9B and 9C are each a top view illustrating an example of a pixelstructure that can be used for the pixel portion 402. In the pixelstructures illustrated in FIGS. 9B and 9C, some components (e.g., a gateinsulating film) are not illustrated in order to avoid complexity of thedrawings.

In the pixel structure in FIG. 9B, one element controlling a pixel (alsoreferred to as pixel switching element or pixel transistor) is providedfor each pixel in the same plane. Two pixels are illustrated in FIG. 9B.The pixel structure in FIG. 9B is different from that in one embodimentof the present invention, and is an example of a general pixelstructure.

A first pixel 440 and a second pixel 442 are formed in the pixelstructure in FIG. 9B. The first pixel 440 includes a source line 408 a,a gate line 412, a first pixel electrode 430, and a first transistor 450controlling the first pixel electrode 430. The second pixel 442 includesa source line 408 b, the gate line 412, a second pixel electrode 432,and a second transistor 452 controlling the second pixel electrode 432.

In the pixel structure illustrated in FIG. 9B, a region corresponding tothe first pixel electrode 430 and the second pixel electrode 432 is adisplay region. The first transistor 450 has a switching function forthe first pixel electrode 430 and thus can control the first pixelelectrode 430. The second transistor 452 has a switching function forthe second pixel electrode 432 and thus can control the second pixelelectrode 432.

In the pixel structure in FIG. 9C, one element controlling a pixel (alsoreferred to as pixel switching element or pixel transistor) is providedfor each pixel so that elements for adjacent pixels are stacked. Twopixels are illustrated in FIG. 9C. The pixel structure in FIG. 9C is oneembodiment of the present invention.

A first pixel 444 and a second pixel 446 are formed in the pixelstructure in FIG. 9C. The first pixel 444 includes the source line 408a, the gate line 412, a first pixel electrode 434, and a firsttransistor 460 controlling the first pixel electrode 434. The secondpixel 446 includes the source line 408 b, the gate line 412, a secondpixel electrode 436, and a second transistor 462 controlling the secondpixel electrode 436.

In the pixel structure illustrated in FIG. 9C, a region corresponding tothe first pixel electrode 434 and the second pixel electrode 436 is adisplay region. Note that in FIG. 9C, since the source line 408 a andthe source line 408 b are stacked, they are shown in the same positionin the top view; since the first transistor 460 and the secondtransistor 462 are stacked, they are shown in the same position in thetop view. The first transistor 460 has a switching function for thefirst pixel electrode 434 and thus can control the first pixel electrode434. The second transistor 462 has a switching function for the secondpixel electrode 436 and thus can control the second pixel electrode 436.

By using the pixel structure in FIG. 9C for the pixel portion 402, thearea of a region where the transistors are disposed can be reduced.Accordingly, the area of the pixel electrodes can be increased.

As the display element provided in the display device in FIG. 9A, aliquid crystal element (also referred to as liquid crystal displayelement) or a light-emitting element (also referred to as light-emittingdisplay element) can be used. The light-emitting element includes, inits category, an element whose luminance is controlled by current orvoltage, and specifically includes, in its category, an inorganicelectroluminescent (EL) element, an organic EL element, and the like.Furthermore, a display medium whose contrast is changed by an electriceffect, such as electronic ink, can be used.

One embodiment of the display element provided in the display device inFIG. 9A will be described with reference to FIGS. 10A and 10B. FIGS. 10Aand 10B are each a cross-sectional view of a display device taken alongline X5-Y5 in FIG. 9A. Here, the pixel structure in FIG. 9C is used forthe pixel portion 402 in FIG. 9A.

The display devices in FIGS. 10A and 10B include a connection terminalelectrode 415 and a terminal electrode 416 in the FPC terminal portion405 over the first substrate 401. The connection terminal electrode 415and the terminal electrode 416 are electrically connected to a terminalof the FPC 418 through an anisotropic conductive film 419.

The connection terminal electrode 415 is formed through the same stepsas a conductive film 433, the first pixel electrode 434, and the secondpixel electrode 436. The terminal electrode 416 is formed through thesame steps as a source electrode and a drain electrode of the firsttransistor 460.

Further, the pixel portion 402 and the source driver circuit portion 403which are provided over the first substrate 401 include a plurality oftransistors. As examples of the plurality of transistors, the firsttransistor 460 and the second transistor 462 included in the pixelportion 402, and a first transistor 480 and a second transistor 482included in the source driver circuit portion 403 are illustrated inFIGS. 10A and 10B.

Although the first transistor 480 and the second transistor 482 arestacked in the source driver circuit portion 403 in this embodiment, oneembodiment of the present invention is not limited thereto; for example,in a driver circuit including the source driver circuit portion, astructure including either the first transistor 480 or the secondtransistor 482 may be employed.

The first transistor 480 and the second transistor 482 included in thesource driver circuit portion 403 can, for example, select and controlthe source lines connected to the pixels arranged in a matrix.

In this embodiment, a conductive film is not formed over the firsttransistor 460 or the second transistor 462 included in the pixelportion 402, and the conductive film 433 is formed over the firsttransistor 480 and the second transistor 482 included in the sourcedriver circuit portion 403.

The conductive film 433 has a function of blocking an electric fieldfrom the outside, that is, preventing an external electric field(particularly, static electricity) from affecting the inside (a circuitincluding the first transistor 480 and the second transistor 482). Ablocking function of the conductive film 433 can prevent fluctuation inthe electrical characteristics of the first transistor 480 and thesecond transistor 482 due to an influence of an external electric fieldsuch as static electricity.

Note that in this embodiment, the first transistor 460 and the secondtransistor 462 included in the pixel portion 402 and the firsttransistor 480 and the second transistor 482 included in the sourcedriver circuit portion 403 have the same size; however, one embodimentof the present invention is not limited thereto. The sizes (L/W) or thenumber of the transistors used in the pixel portion 402 and the sourcedriver circuit portion 403 may vary as appropriate. The gate drivercircuit portion 404 is not illustrated in FIGS. 10A and 10B; the gatedriver circuit portion 404 can have a structure similar to that of thesource driver circuit portion 403 although a portion to which the gatedriver circuit portion 404 is connected, a connection method of the gatedriver circuit portion 404, and the like are different from a portion towhich the source driver circuit portion 403 is connected, a connectionmethod of the source driver circuit portion 403, and the like,respectively.

In the display devices illustrated in FIGS. 10A and 10B, the firsttransistor 460 and the second transistor 462 in the pixel portion 402include a first semiconductor film 466 and a second semiconductor film468, respectively. Note that at least one of the first semiconductorfilm 466 and the second semiconductor film 468 is an oxide semiconductorfilm. With the use of an oxide semiconductor film for the firstsemiconductor film 466 or the second semiconductor film 468, thesemiconductor device can have high field-effect mobility and operate athigh speed. Note that in this embodiment, an oxide semiconductor film isused for each of the first semiconductor film 466 and the secondsemiconductor film 468.

The first transistor 460 and the second transistor 462 have the gateelectrode 472 in common. That is, the first transistor 460 is a top-gatetransistor in which the gate electrode 472 is provided over the firstsemiconductor film 466 with the first gate insulating film 467therebetween, and the second transistor 462 is a bottom-gate transistorin which the second semiconductor film 468 is provided over the gateelectrode 472 with the second gate insulating film 469 therebetween. Byemploying a structure in which the first transistor 460 and the secondtransistor 462 are stacked and have the gate electrode 472 in common,the area of a region where the transistors are disposed can be reduced.Since the first transistor 460 and the second transistor 462 have thegate electrode 472 in common, the number of manufacturing steps,materials, or the like of the transistors can be reduced. The number ofthe gate lines 412 connected to the gate electrodes 472 can also bereduced. Note that the first transistor 460 includes the sourceelectrode connected to the source line 408 a, and the second transistor462 includes a source electrode connected to the source line 408 b.

Further, in the display devices illustrated in FIGS. 10A and 10B, thefirst transistor 480 and the second transistor 482 in the source drivercircuit portion 403 can have structures similar to those of the firsttransistor 460 and the second transistor 462 in the pixel portion 402.

Therefore, with the use of a semiconductor device including transistorsaccording to one embodiment of the present invention, a high-resolutiondisplay device with improved aperture ratio can be provided.

The first transistor 460 and the second transistor 462 provided in thepixel portion 402 are electrically connected to a display element toform a display panel. A variety of display elements can be used as thedisplay element as long as display can be performed.

The display device illustrated in FIG. 10A is an example of a liquidcrystal display device including a liquid crystal element as a displayelement. In FIG. 10A, a liquid crystal element 420 as a display elementincludes the pixel electrodes (the first pixel electrode 434 and thesecond pixel electrode 436), a counter electrode 421, and a liquidcrystal layer 422. Note that an alignment film 423 and an alignment film424 are provided so that the liquid crystal layer 422 is interposedtherebetween. The counter electrode 421 is provided on the secondsubstrate 407 side, and the pixel electrodes (the first pixel electrode434 and the second pixel electrode 436) and the counter electrode 421are stacked with the liquid crystal layer 422 interposed therebetween.

A spacer 425 is a columnar spacer obtained by selective etching of aninsulating film and is provided in order to control the thickness of theliquid crystal layer 422 (cell gap). Alternatively, a spherical spacermay be used.

In the case where a liquid crystal element is used as the displayelement, thermotropic liquid crystal, low-molecular liquid crystal,high-molecular liquid crystal, polymer dispersed liquid crystal,ferroelectric liquid crystal, anti-ferroelectric liquid crystal, or thelike can be used. These liquid crystal materials exhibit a cholestericphase, a smectic phase, a cubic phase, a chiral nematic phase, anisotropic phase, or the like depending on conditions.

Alternatively, in the case of employing a horizontal electric fieldmode, liquid crystal exhibiting a blue phase for which an alignment filmis unnecessary may be used. A blue phase is one of liquid crystalphases, which is generated just before a cholesteric phase changes intoan isotropic phase while temperature of cholesteric liquid crystal isincreased. Since the blue phase appears only in a narrow temperaturerange, a liquid crystal composition in which several weight percent ormore of a chiral material is mixed is used for the liquid crystal layerin order to improve the temperature range. The liquid crystalcomposition which includes liquid crystal exhibiting a blue phase and achiral material has a short response time, and has optical isotropy,which makes the alignment process unneeded and the viewing angledependence small. In addition, since an alignment film does not need tobe provided and rubbing treatment is unnecessary, electrostaticdischarge damage caused by the rubbing treatment can be prevented anddefects and damage of the liquid crystal display device can be reducedin the manufacturing process. Thus, the liquid crystal display devicecan be manufactured with improved productivity. A transistor includingan oxide semiconductor film has a possibility that the electricalcharacteristics of the transistor may vary significantly by theinfluence of static electricity and deviate from the designed range.Therefore, it is more effective to use a liquid crystal materialexhibiting a blue phase for a liquid crystal display device including atransistor that includes an oxide semiconductor film.

The specific resistivity of the liquid crystal material is higher thanor equal to 1×10⁹ Ω·cm, preferably higher than or equal to 1×10¹¹ Ω·cm,further preferably higher than or equal to 1×10¹² Ω·cm. Note that thespecific resistivity in this specification is measured at 20° C.

The size of a storage capacitor formed in the liquid crystal displaydevice is set considering the leakage current of the transistor providedin the pixel portion or the like so that charge can be held for apredetermined period. The size of the storage capacitor may be setconsidering the off-state current of the transistor or the like. Forexample, by using a transistor including an oxide semiconductor filmwhich is highly purified and in which formation of an oxygen vacancy issuppressed, it is enough to provide a storage capacitor having acapacitance that is ⅓ or less, preferably ⅕ or less of liquid crystalcapacitance of each pixel. In the transistor including an oxidesemiconductor film which is highly purified and in which formation of anoxygen vacancy is suppressed, the current in an off state (off-statecurrent) can be made small. Accordingly, an electric signal such as animage signal can be held for a longer period, and a writing interval canbe set longer in an on state. Accordingly, the frequency of refreshoperation can be reduced, which leads to an effect of suppressing powerconsumption.

The transistor used in this embodiment, which includes an oxidesemiconductor film which is highly purified and in which formation of anoxygen vacancy is suppressed, can have high field-effect mobility andthus can operate at high speed. For example, when such a transistor thatcan operate at high speed is used for a liquid crystal display device, aswitching transistor in a pixel portion and a driver transistor in adriver circuit portion can be formed over one substrate. That is, sincea semiconductor device formed using a silicon wafer or the like is notadditionally needed as a driver circuit, the number of components of thesemiconductor device can be reduced. In addition, by using a transistorthat can operate at high speed in a pixel portion, a high-quality imagecan be provided.

For the liquid crystal display device, a twisted nematic (TN) mode, anin-plane-switching (IPS) mode, a fringe field switching (FFS) mode, anaxially symmetric aligned micro-cell (ASM) mode, an optical compensatedbirefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, anantiferroelectric liquid crystal (AFLC) mode, or the like can be used.

A normally black liquid crystal display device such as a transmissiveliquid crystal display device utilizing a vertical alignment (VA) modeis preferable. Some examples are given as the vertical alignment mode.For example, a multi-domain vertical alignment (MVA) mode, a patternedvertical alignment (PVA) mode, and the like can be used. Furthermore,this embodiment can be applied to a VA liquid crystal display device.The VA liquid crystal display device has a kind of form in whichalignment of liquid crystal molecules of a liquid crystal display panelis controlled. In the VA liquid crystal display device, liquid crystalmolecules are aligned in a vertical direction with respect to a panelsurface when no voltage is applied. Moreover, it is possible to use amethod called domain multiplication or multi-domain design, in which apixel is divided into some regions (subpixels) and molecules are alignedin different directions in their respective regions.

In the display device, a black matrix (a light-blocking layer), anoptical member (an optical substrate) such as a polarizing member, aretardation member, or an anti-reflection member, and the like areprovided as appropriate. For example, circular polarization may beobtained by using a polarizing substrate and a retardation substrate. Inaddition, a backlight, a side light, or the like may be used as a lightsource.

As a method for display in the pixel portion, a progressive method, aninterlace method, or the like can be employed. Further, color elementscontrolled in a pixel at the time of color display are not limited tothree colors: R, G, and B (R, G, and B correspond to red, green, andblue, respectively). For example, R, G, B, and W (W corresponds towhite); R, G, B, and one or more of yellow, cyan, magenta, and the like;or the like can be used. Further, the sizes of display regions may bedifferent between respective dots of color elements. Note that thedisclosed invention is not limited to the application to a displaydevice for color display; the disclosed invention can also be applied toa display device for monochrome display.

Alternatively, as the display element included in the display device, alight-emitting element utilizing electroluminescence can be used.Light-emitting elements utilizing electroluminescence are classifiedaccording to whether a light-emitting material is an organic compound oran inorganic compound. In general, the former is referred to as anorganic EL element, and the latter is referred to as an inorganic ELelement.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. The carriers (electrons and holes) are recombined,and thus, the light-emitting organic compound is excited. Thelight-emitting organic compound returns to a ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that an example ofan organic EL element as a light-emitting element is described here.

To extract light from the light-emitting element, at least one of thepair of electrodes has a light-transmitting property. A transistor and alight-emitting element are formed over a substrate. The light-emittingelement can employ any of the following emission structures: a topemission structure in which light emission is extracted through thesurface opposite to the substrate; a bottom emission structure in whichlight emission is extracted through the surface on the substrate side;or a dual emission structure in which light emission is extractedthrough the surface opposite to the substrate and the surface on thesubstrate side.

The display device illustrated in FIG. 10B is an example of a displaydevice including a light-emitting element as a display element. Alight-emitting element 490 as a display element is electricallyconnected to the transistor (the first transistor 460 or the secondtransistor 462) provided in the pixel portion 402. Here, thelight-emitting element 490 has a layered structure of the pixelelectrode (the first pixel electrode 434 or the second pixel electrode436), an electroluminescent layer 492, and an upper electrode 494;however, the structure of the light-emitting element 490 is not limitedthereto. The structure of the light-emitting element 490 can be changedas appropriate depending on the direction in which light is extractedfrom the light-emitting element 490, or the like.

A partition wall 496 is formed using an organic insulating material oran inorganic insulating material. It is particularly preferable that thepartition wall 496 be formed using a photosensitive resin material tohave an opening on each of the pixel electrodes (the first pixelelectrode 434 and the second pixel electrode 436) so that a sidewall ofthe opening is formed as a tilted surface with continuous curvature.

The electroluminescent layer 492 may be formed with a single layer or aplurality of layers stacked.

A protective film may be formed over the upper electrode 494 and thepartition wall 496 in order to prevent oxygen, hydrogen, moisture,carbon dioxide, or the like from entering the light-emitting element490. As the protective film, a silicon nitride film, a silicon nitrideoxide film, a DLC film, or the like can be formed. In addition, in aspace which is formed with the first substrate 401, the second substrate407, and the sealant 406, a filler 498 is provided for sealing. It ispreferable that a panel be packaged (sealed) with a protective film(such as a laminate film or an ultraviolet curable resin film) or acover material with high air-tightness and little degasification so thatthe panel is not exposed to the outside air, in this manner.

As the filler 498, an ultraviolet curable resin or a thermosetting resincan be used as well as an inert gas such as nitrogen or argon. Forexample, polyvinyl chloride (PVC), an acrylic-based resin, apolyimide-based resin, an epoxy-based resin, a silicone-based resin,polyvinyl butyral (PVB), or ethylene vinyl acetate (EVA) can be used.For example, nitrogen may be used for the filler 498.

In addition, if needed, an optical film, such as a polarizing plate, acircularly polarizing plate (including an elliptically polarizingplate), a retardation plate (a quarter-wave plate or a half-wave plate),or a color filter, may be provided as appropriate on a light-emittingsurface of the light-emitting element. Further, the polarizing plate orthe circularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by projections and depressions on the surface so as to reducethe glare can be performed.

Note that in FIGS. 10A and 10B, a flexible substrate as well as a glasssubstrate can be used as the first substrate 401 and the secondsubstrate 407. For example, a plastic substrate having alight-transmitting property or the like can be used. As plastic, afiberglass-reinforced plastics (FRP) plate, a polyvinyl fluoride (PVF)film, a polyester film, or an acrylic-based resin film can be used. Inaddition, a sheet with a structure in which an aluminum foil isinterposed between PVF films or polyester films can be used.

As described above, by using the semiconductor device includingtransistors in any of Embodiments 1 to 4, a display device having avariety of functions can be provided.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 6

A semiconductor device disclosed in this specification can be applied toa variety of electronic devices (including a game machine). Examples ofthe electronic devices are a television set (also referred to astelevision or television receiver), a monitor of a computer or the like,a camera such as a digital camera or a digital video camera, a digitalphoto frame, a mobile phone (also referred to as mobile telephone ormobile phone device), a portable game console, a portable digitalassistant (PDA), a portable terminal (including a smart phone, a tabletPC, and the like), an audio reproducing device, a large-sized gamemachine such as a pachinko machine, and the like. Examples of electronicdevices each including the semiconductor device described in any of theabove embodiments will be described with reference to FIGS. 11A to 11Fand FIGS. 12A-1 to 12A-3 and 12B.

FIG. 11A illustrates a laptop personal computer, which includes a mainbody 3001, a housing 3002, a display portion 3003, a keyboard 3004, andthe like. The semiconductor device described in any of the aboveembodiments is applied to the display portion 3003, whereby a laptoppersonal computer including a high-resolution display device can beprovided.

FIG. 11B illustrates a personal digital assistant (PDA), which includesa main body 3021 provided with a display portion 3023, an externalinterface 3025, operation buttons 3024, and the like. A stylus 3022 isprovided as an accessory for operation. The semiconductor devicedescribed in any of the above embodiments is applied to the displayportion 3023, whereby a personal digital assistant (PDA) including ahigh-resolution display device can be provided.

FIG. 11C illustrates an example of an electronic book reader. Forexample, an electronic book reader 2700 includes two housings 2701 and2703. The housing 2701 and the housing 2703 are combined with a hinge2711 so that the electronic book reader 2700 can be opened and closedwith the hinge 2711 as an axis. With such a structure, the electronicbook reader 2700 can operate like a paper book.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, text can bedisplayed on a display portion on the right side (the display portion2705 in FIG. 11C) and images can be displayed on a display portion onthe left side (the display portion 2707 in FIG. 11C). The semiconductordevice described in any of the above embodiments is applied to thedisplay portion 2705 and the display portion 2707, whereby an electronicbook reader including a high-resolution display device can be provided.In the case of using a transflective or reflective liquid crystaldisplay device as the display portion 2705, the electronic book readermay be used in a comparatively bright environment; therefore, a solarcell may be provided so that power generation by the solar cell andcharge by a battery can be performed. When a lithium ion battery is usedas the battery, there are advantages of downsizing and the like.

Further, FIG. 11C illustrates an example in which the housing 2701 isprovided with an operation portion and the like. For example, thehousing 2701 is provided with a power switch 2721, operation keys 2723,a speaker 2725, and the like. With the operation keys 2723, pages can beturned. Note that a keyboard, a pointing device, or the like may also beprovided on the surface of the housing, on which the display portion isprovided. Furthermore, an external connection terminal (an earphoneterminal, a USB terminal, or the like), a recording medium insertionportion, and the like may be provided on the back surface or the sidesurface of the housing. Moreover, the electronic book reader 2700 mayhave a function of an electronic dictionary.

The electronic book reader 2700 may have a configuration capable ofwirelessly transmitting and receiving data. Through wirelesscommunication, desired book data or the like can be purchased anddownloaded from an electronic book server.

FIG. 11D illustrates a mobile phone, which includes two housings, ahousing 2800 and a housing 2801. The housing 2801 includes a displaypanel 2802, a speaker 2803, a microphone 2804, a pointing device 2806, acamera lens 2807, an external connection terminal 2808, and the like. Inaddition, the housing 2800 includes a solar cell 2810 having a functionof charge of the portable information terminal, an external memory slot2811, and the like. Further, an antenna is incorporated in the housing2801. The semiconductor device described in any of the above embodimentsis applied to the display panel 2802, whereby a mobile phone including ahigh-resolution display device can be provided.

Further, the display panel 2802 is provided with a touch panel. Aplurality of operation keys 2805 displayed as images is shown by dashedlines in FIG. 11D. Note that a boosting circuit by which a voltageoutput from the solar cell 2810 is increased to be sufficiently high foreach circuit is also included.

In the display panel 2802, the display direction can be appropriatelychanged depending on a usage pattern. Further, the camera lens 2807 isprovided on the same surface as the display panel 2802, and thus it canbe used as a video phone. The speaker 2803 and the microphone 2804 canbe used for videophone calls, recording and playing sound, and the likeas well as voice calls. Further, the housings 2800 and 2801 in a statewhere they are developed as illustrated in FIG. 11D can shift by slidingso that one is lapped over the other; therefore, the size of the mobilephone can be reduced, which makes the mobile phone suitable for beingcarried.

The external connection terminal 2808 can be connected to an AC adapterand various types of cables such as a USB cable, and charging and datacommunication with a personal computer are possible. Moreover, a largeamount of data can be stored by inserting a storage medium into theexternal memory slot 2811 and can be transferred.

Further, in addition to the above functions, an infrared communicationfunction, a television reception function, or the like may be provided.

FIG. 11E illustrates a digital video camera which includes a main body3051, a display portion A 3057, an eyepiece 3053, an operation switch3054, a display portion B 3055, a battery 3056, and the like. Thesemiconductor device described in any of the above embodiments isapplied to the display portion A 3057 and the display portion B 3055,whereby a digital video camera including a high-resolution displaydevice can be provided.

FIG. 11F illustrates an example of a television set. In a television set9600, a display portion 9603 is incorporated in a housing 9601. Thedisplay portion 9603 can display images. Here, the housing 9601 issupported by a stand 9605. The semiconductor device described in any ofthe above embodiments is applied to the display portion 9603, whereby atelevision set including a high-resolution display device can beprovided.

The television set 9600 can be operated by an operation switch of thehousing 9601 or a separate remote controller. Further, the remotecontroller may be provided with a display portion for displaying dataoutput from the remote controller.

Note that the television set 9600 is provided with a receiver, a modem,and the like. With the use of the receiver, general televisionbroadcasting can be received. Moreover, when the display device isconnected to a communication network with or without wires via themodem, one-way (from a sender to a receiver) or two-way (between asender and a receiver or between receivers) information communicationcan be performed.

FIGS. 12A-1 to 12A-3 and 12B illustrate examples of a tablet terminal.FIGS. 12A-1 to 12A-3 illustrate a tablet terminal 5000. FIG. 12Billustrates a tablet terminal 6000.

FIGS. 12A-1, 12A-2, and 12A-3 are a front view, a side view, and a rearview of the tablet terminal 5000, respectively. FIG. 12B is a front viewof the tablet terminal 6000.

The tablet terminal 5000 includes a housing 5001, a display portion5003, a power button 5005, a front camera 5007, a rear camera 5009, afirst external connection terminal 5011, a second external connectionterminal 5013, and the like.

In addition, the display portion 5003 is incorporated in the housing5001 and can be used as a touch panel. For example, e-mailing orschedule management can be performed by touching an icon 5015 and thelike on the display portion 5003. Further, the front camera 5007 isincorporated in the front side of the housing 5001, whereby an image onthe user's side can be taken. The rear camera 5009 is incorporated inthe rear side of the housing 5001, whereby an image on the opposite sideof the user can be taken. Further, the housing 5001 includes the firstexternal connection terminal 5011 and the second external connectionterminal 5013. Sound can be output to an earphone or the like throughthe first external connection terminal 5011, and data can be movedthrough the second external connection terminal 5013, for example.

The tablet terminal 6000 in FIG. 12B includes a first housing 6001, asecond housing 6003, a hinge portion 6005, a first display portion 6007,a second display portion 6009, a power button 6011, a first camera 6013,a second camera 6015, and the like.

The first display portion 6007 is incorporated in the first housing6001. The second display portion 6009 is incorporated in the secondhousing 6003. For example, the first display portion 6007 and the seconddisplay portion 6009 are used as a display panel and a touch panel,respectively. The user can select images, enter characters, and so on bytouching an icon 6019 displayed on the second display portion 6009 or akeyboard 6021 (actually, a keyboard image displayed on the seconddisplay portion 6009) while looking at a text icon 6017 displayed on thefirst display portion 6007. Alternatively, the first display portion6007 and the second display portion 6009 may be a touch panel and adisplay panel, respectively, or the first display portion 6007 and thesecond display portion 6009 may be touch panels.

The first housing 6001 and the second housing 6003 are connected to eachother and open and close on the hinge portion 6005. With this structure,when the first display portion 6007 incorporated in the first housing6001 and the second display portion 6009 incorporated in the secondhousing 6003 face each other in carrying the tablet terminal 6000, thesurfaces of the first display portion 6007 and the second displayportion 6009 (e.g., plastic substrates) can be protected, which ispreferable.

Alternatively, the first housing 6001 and the second housing 6003 may beseparated by the hinge portion 6005 (so-called convertible type). Thus,the application range of the tablet terminal 6000 can be extended; forexample, the first housing 6001 is used in a vertical orientation andthe second housing 6003 is used in a horizontal orientation.

Further, with the first camera 6013 and the second camera 6015, 3Dimages can be taken.

The tablet terminal 5000 and the tablet terminal 6000 may send andreceive data wirelessly. For example, through wireless internetconnection, desired data can be purchased and downloaded.

The tablet terminals 5000 and 6000 can have other functions such as afunction of displaying various kinds of data (e.g., a still image, amoving image, and a text image), a function of displaying a calendar, adate, the time, or the like on the display portion, a touch-inputfunction of operating or editing the data displayed on the displayportion by touch input, and a function of controlling processing byvarious kinds of software (programs). A detector such as a photodetectorcapable of optimizing display luminance in accordance with the amount ofoutside light or a sensor for detecting inclination, like a gyroscope oran acceleration sensor, can be included.

The semiconductor device described in any of the above embodiments isapplied to the display portion 5003 of the tablet terminal 5000, thefirst display portion 6007 of the tablet terminal 6000, and/or thesecond display portion 6009 of the tablet terminal 6000, whereby atablet terminal including a high-resolution display device can beprovided.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

This application is based on Japanese Patent Application serial no.2011-273413 filed with Japan Patent Office on Dec. 14, 2011, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a first transistor comprising: a first semiconductor film; a first insulating film over the first semiconductor film; and a gate electrode over the first insulating film; and a second transistor comprising: the gate electrode; a second insulating film over the gate electrode; and a second semiconductor film over the second insulating film, wherein the first transistor and the second transistor are stacked, and wherein at least one of the first semiconductor film and the second semiconductor film is an oxide semiconductor film. 